职责描述：
1.Develop high aspect ratio Si Dry Etching process, and responsible for the process set up, and optimization.
开发刻蚀（高深宽比）工艺，负责工艺设置、优化。
2.Complete micro-structure measurement and data analysis.
完成微结构分析测量和数据分析。
3.Extend new equipment to fully release.
扩展新设备到量产。
4.Continuously Improve Process: reduce defect density and improve the process performance.
持续改进工艺：降低缺陷密度，提高工艺性能。
5.Write technical documents including patent, experiment report, etc.
撰写专利、实验报告等技术文件。
6.Organize the process training for engineering.
组织工艺技术培训。
任职要求：
1.Master’s degree or above in Electronics, Physics, Material Science, Semiconductor or other related science and engineer
硕士及以上学历，电子、物理、材料科学、半导体或相关科学与工程专业。
2.At least 3 years of process development or maintenance experience in Dry Etching or DRIE (Deep Reactive Ion Etching) area.
至少3年干法蚀刻或深硅刻蚀（DRIE）的工艺开发或维护经验。
3.1Familiar with Dry Etching related process and measurement (equipment operation and recipe editing).
熟悉干法蚀刻相关的工艺和测量（包括设备操作和菜单编辑）。
4.Familiar with the configuration and working principle of the Dry Etching platform, and could independently create, modify, and optimize the process recipes.
熟悉干法刻蚀平台的配置和工作原理，能独立创建、修改、优化工艺菜单。
5.Hands-on ability at dry etching.
较强的干法刻蚀的动手能力。
6.Proficient in office software such as Excel, PPT, etc.
熟练使用Excel、PPT等办公软件。
7.Fluent English speaking and writing skill.
流利的英语听说读写能力。
8.Experience in process development in 8-12 inch Fab is preferred.
有8-12英寸工厂工艺开发经验者优先。